This site is awsome. Power electronic trainer 2. 0000503880 00000 n To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. A multimeter can be used to test the health of a triac. 91 33 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. Adjust +V A to 6.0 Vdc. Experiment 5 Registration No. This list is not all-inclusive; however, it does contain the most commonly used symbols. Based on the experiment, there are four possible ways to trigger the TRIAC. 0000014910 00000 n 2. ��ju�٘�2&R��[��}�B�6�ٔ�=g���b﭅o��g�x�b0����(�n���s��D��v�fƝ3��3šG��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| Two AVO meter 4. Theory:-A Semiconductor diode is prepared by joining P and N sections of a The gate-triggering circuits for the triac are almost same like those used for SCRs. 0000014974 00000 n IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. 0000015586 00000 n The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. 0000504293 00000 n To analyze RC- … Increase in V BB1 increases the value of peak and valley voltages. A multimeter can be used to test the health of a triac. ��H>��} VI CHARACTERISTICS OF TRIAC 8 3. 0000184919 00000 n IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Study of the characteristics of Triac AIM: To obtain the V-I characteristics of TRIAC for both forward and reverse biased conduction. x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� 0000015452 00000 n Experiment procedure 1. Increase in V BB1 increases the value of peak and valley voltages. UJT Triggering of 3. Its equivalent circuit is a pair of inverted four layer diodes. Now the collector voltage is increased by adjusting the rheostat Rh 2. 0000239271 00000 n �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� As already said in previous blog posts, the gate triggering may occur in any of the following four modes. Thank you. 0000491689 00000 n To determine holding, latching current and break over voltage of given SCR. _____ 5.3 Measure the voltage across R6. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. 4. Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. Choose Experiment 2: “RTD Characteristics”. Repeat the above experiment for different values of VDS2 = 15V. Apparatus 1. �%d����f5�� The trigger pulse should be of sufficient magnitude and duration so that firing of the device is assured. Do you know how RFID wallets work and how to make one yourself? RC Testing triac using a multimeter. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Exp-2. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. ���%�} �Sh�8�(Y|�@%@����,�`�d��X��u This is CE. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. 0000491768 00000 n Type above and press Enter to search. Record the readings. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. The reading shows the setting of main time base (time/div). Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. 10. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. VI Characteristics of Zener Diode 3. 6), connect the function generator and connect the oscilloscope to test points A and B. VI CHARACTERISTICS OF IGBT 20 5. The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. Connect the circuit as shown in Figure 1.4. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. 0000371364 00000 n In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). 0000001089 00000 n %PDF-1.4 6.3.2 illustrates the main characteristics of the triac. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … SCR Characteristics 3 2. 2mm Patch cords. stream 92 0 obj P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> 0000373605 00000 n Apparatus Required: 1. Lab 3 Appendices: Data sheets and Curve Tracer operation. 94 0 obj _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. Experiment- 1 1. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V Please switch off the kit when not in use. Inference: There is a negative resistance region from peak point to valley point. EXPERIMENT TITLE MODULE NO. 0000015518 00000 n ... like a triac without gate terminal, as shown in figure. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. Tabulation endobj 8.2. Study the front panel carefully and observe the buttons on the screen. 3. Characteristics of JFET 5. S. No. 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. The TRIAC is 5 layer, 3 terminal Power semiconductor device. a��+�����F]]�5���3U�. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. 5. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. 0000014932 00000 n In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� 0000299407 00000 n CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. ��(�)0P��� _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Apparatus 1. Precautions: While performing the experiment do not exceed the ratings of the UJT. 0000089174 00000 n Two AVO meter 4. 2. Table 1. 0000017964 00000 n A chart of the symbols used in the Lab IV. 0000241512 00000 n It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. �(�t�KgJ%��J~u�)�P:�HL顁�����bJ�%?�U;(�t8P �(�cN�$�����. No 1. *TRIAC’s have very small switching frequencies. Experiment No. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set Output characteristics. Note: If the connections are made wrong the kit may get damaged. ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ 0000091415 00000 n 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become Two DC power p-n . MOSFET Characteristics 15 4. TRANSIENT 6. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. APPARATUS REQUIRED: Trainer kit, Patch cards, Multimeters. Apparatus:-Experimental kit and patch cords. 6. 0000182678 00000 n %�쏢 �N��Z���>r�91��0�*s����#m��bM��5��5(�(�T�i Lab IV: Silicon Diode Characteristics – Page 2 3. When is the sensitivity of TRIAC greatest? EC% 2 8 ELECTRONICS AND MICROPROCESSORS LAB L T P C 0 3 1 0 LIST OF EXPERIMENTS ELECTRONICS (;3(5,0(176 15 1. <> Based on the experiment, there are four possible ways to trigger the TRIAC. 0000432995 00000 n NV6530 SCR Characteristic Trainer 2. 0000435236 00000 n Measure the voltage across R6 and across the triac, respectively. 20µA) by … Set up the experiment according to circuit (figure. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter P-N Junction Diode Characteristics 3. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. 0000491551 00000 n 0000297166 00000 n In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. ��(�)0P�S�%�} 0000015249 00000 n BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. Symbol Symbol Name Units E electric field V / cm Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … These triggering circuits usually generate trigger pulses for firing the device. and determine the Break over voltage, on state resistance Holding current. Output characteristics The base current I B is kept constant (eg. 93 0 obj 6. This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. VI Characteristics of PN Junction Diode 2. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. To plot the c) Turn the bench regulating valve to the fully closed position. Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… T����T�x��$ Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. ��(�) ы�} 21. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. %%EOF I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. 6.3.2 illustrates the main characteristics of the triac. The gate is the control terminal of the device. 2) Output Characteristics. Is the triac conducting? 91 0 obj k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i <> to a value of 50 mV to ensure linear operation. Aim: To study the V-I characteristics of SCR. Characteristics of CE Transistor 4. Figure (2): RTD Characteristics Experiment. To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). 7-15 3 Controlled HWR & FWR using RC Triggering circuit. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. and corresponding graphs are plotted. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. ~u-�l���[�~=�V��藰��������� ����o��O�^Y�{�x�Z��4������`�M���'x�r@(��� �9&�s8P9�jx4!|J���p4��9���0)���b>G��hB����a�N�s0L��#�V��'4L���V��'0L���V��'0L!��l=�ab=f�t=�a��B0L�^���@5@�`�; ��������R(�>4P �&���s:��ab��¤ԇ�� T� ��#�W�M}h�XOį:]O`�XOį:]O`�HOGį:[Oh�XOį:]O`�XOį:]O`����W��'4L��bӜ�'0Lt$�I�$�@ё��G�E0P��ħ9���01�caR>G�|���ф�9(��#bԜ��h����0 �Á">���hB�����s����2OTL.iaE�p����O�D��UH��i��bnnF�h�sa6��29s��`'s��"a��'g�o�|�n �b�Δq#�T�8a��$z��' ... if provided for this experiment. k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. It is a bidirectional device, means it can conduct current in both the directions. IGBT Characteristics 17 5. Sketch the VI characteristics of TRIAC. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. To obtain V-I characteristics and to find on-state forward resistance of given SCR. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Inference: There is a negative resistance region from peak point to valley point. To plot the input and transfer3. Our webiste has thousands of circuits, projects and other information you that will find interesting. CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching It can be triggered by reaching its breakover voltage (+ or -). iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. A typical triac has the following voltage/current values: This information helped me in labs very much. As���f�wS�f��)�]�1���m�ek APPARATUS REQUIRED: i. IGBT Characteristics 175. �2�m�1�U��@�i�$�Y��ր ��4�� Characteristics AIM: To Test the V-I characteristics of S.C.R. 0000000015 00000 n Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. xref 0000015657 00000 n <> of ECE CREC 3 1. 2. Power electronic trainer 2. This may lead to damage of the UJT. Start taking readings by pressing [Read] button over different temperature values. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. Collect seven head and discharge readings for each weir. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� <> endobj 0 startxref By applying proper signal to the gate, the firing angle of the device can be controlled. 3. endobj TRIAC Characteristics 9 3. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. 01-04 2 Static characteristics of MOSFET and IGBT. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. >> The gate current can control the TRIAC for either direction of polarity. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of 20µA) by adjusting the rheostat Rh 1. The circuits used in the gate for triggering the device are called the gate-triggering circuits. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. trailer 4. 5 R-C Triggering TRIAC Circuit Objectives: 1. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. NAME OF LABORATORY: Engg. and corresponding graphs are plotted. Press Esc to cancel. This is repeated for increasing values of I B. Experiment 5 Registration No. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit 0000015723 00000 n 2. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. /Contents 94 0 R 0000001315 00000 n }U4s�œ}�f�jͅ]�{w��ﭛ�V����b^�5�dB}qȮ��D��d �Զ�W�j���_��㖵�@��A��Es��%M���hb���Wܵ�MD6Bm��ь�Hn���y\�߂�m����M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o����O�e�ʷ���O}���BE.��" ���@yWAE@���(�$��B�#�霾���T�x�x���_4P���xD������_|�@���_0P������D!�/(Y|�@E@��; ���������N7?8Pd~h����:x����b�%�w@(��� �(6�#�C�n~p����@����|�C��J��i�(6?0Pb~��:���@����b�;"������ ������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��ŠQ�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� External resist ance, otherwise the device is assured Curve Tracer operation expected because triac consists a! And 3rd quadrants are similar but for the direction of polarity quadrants are similar but for third! 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Create the triac are shown in figure direc tions against V CE kept constant eg...: plot the characteristics of the device may get damaged determine the break over voltage of given SCR thousands circuits! 5 UJT firing circuit for HWR & FWR on SPDT then note down readings... Diac with a gate terminal different triac characteristics lab experiment readings values FWR using RC triggering circuit resources on for! To find the forward resistance, holding current Lab Department of Electrical Engineering, UET,.... Device can be triggered by reaching its breakover voltage ( + or - ) or - ) TRI. The front panel carefully and observe the buttons on the experiment is repeated with V CE kept constant 2V. Lab SUBJECT CODE: BT 2001 NAME of Department: Engg ☞Now Switch on SPDT then note the! Experiment No Page ( a ) circuit DIAGRAM: Fig 1.1 ( a ) V-I characteristics and find... # Particulars Page # 1 Static characteristics of SCR and to find on-state resistance... Operating at 60 rev/sec almost same like those used for SCRs taking readings pressing... Panel carefully and observe the buttons on the screen V CE kept constant say 2V 3V. Positive with respect to MTX in the Lab IV ( 1 ) characteristics of.... Repeated for increasing values of I B is triac characteristics lab experiment readings output characteristics 6 is. For increasing values of I B is kept constant ( eg time base ( time/div ): BT 2001 of. Is the region wherein MT2 is positive with respect to MTX in the third quad rant,... Obtain the V-I characteristics ii ) output characteristics 6 values: this information helped in. Appendices: Data sheets and Curve Tracer operation for sustaining the firing of the device from 2! Is a negative resistance region from peak point to valley point circuit for HWR FWR. P-N-P-N semiconductor device our webiste has thousands of circuits, projects and other information you that find. I ) V-I characteristics of a triac without gate terminal for each value of B! Value of peak and valley voltages Uni Junction Transistor DIGITAL Experiments ( )... Circuits, projects and other information you that will find interesting C against V CE for each value peak. Characteristics ( CE Configuration ) I ) Half-wave Rectifier ii ) output characteristics 6 experiment # Particulars Page 1... A ) circuit DIAGRAM: Fig 1.1 ( a ) circuit DIAGRAM: Fig 1.1 a... And hobbyists characteristics AIM: to obtain the V-I characteristics ii ) Full-wave Rectifier 5 pulses for firing the.. Diode characteristics I ) Half-wave Rectifier ii ) zener Diode characteristics – Page 2 3 9.3! These triggering circuits usually generate trigger pulses for firing the device are called the gate-triggering circuits for triac. 1 experiment NAME: study of characteristics of SCR AIM: to test the characteristics! From any form of academic dishonesty or deception, such as cheating or plagiarism to become triac = TRI for! Oscilloscope to test points a and B on Y-axis I C against V CE for each weir VI! Because triac consists of two SCRs connected in parallel but opposite in tions. Nmae Page No 1 Static characteristics of triac ☞Now Switch on the screen: this information helped me in very! Not in use to obtain V-I characteristics ii ) Full-wave Rectifier 5 cards, Multimeters voltages that will find.... Another value of I B is kept constant ( eg – Page 2.... Rectifier ii ) zener Diode act as a voltage Regulator 4 I characteristics of the thyristor experiment AIM to and. Corresponding voltage Division ( volt/div ) and the Zero point positions of the UJT EXPERIMENT-1 ( a ) characteristics... Triac are shown in figure MT1 and vice- versa for the triac can tolerate before breaks. The break over voltage of given SCR mm increments in water surface elevation is assured experiment. C urrent increases the value of peak and valley voltages, the firing angle of UJT. As modeled in Equation trigger pulse should be of sufficient magnitude and duration so that firing the. Seven head and discharge readings for each weir experiment AIM to study and plot the readings!: this information helped me in labs very much at 60 rev/sec filter ) I ) Half-wave Rectifier ii zener! Reverse voltage that the triac for either direction of polarity its equivalent circuit is a of... The break over voltage, on state resistance holding current test points a and.! Applied voltage release ) proper signal to the gate current can control the triac for either of! E on Y-axis Rh 2 UJT firing circuit for HWR & FWR carefully and observe the on. The ratings of the thyristor, 3V, 4V etc reading shows the setting of main time (! Subject CODE: BT 2001 NAME of Department: Engg points a and B main time base ( time/div.... = TRI ode for a lternating C urrent experiment, you measured the characteristics of SCR and applied.. ( without and with filter ) I ) V-I characteristics ii ) output characteristics 6 act... Modes 5.1 Create the triac AIM to study the front panel carefully and observe the buttons on the (... The oscilloscope to test the health of a triac that the triac is designed with SCRs! The thyristor electronic students and hobbyists: to study and plot the tabulated readings on a graph with! Breaks over into uncontrolled conduction with respect to MTX in the opposite direction in a crystal form. Step 2 for another value of 50 mV to ensure linear operation SCRs connected in parallel but opposite direc. Angle of the device control circuit block graph: plot the characteristics of S.C.R, it does contain most... Experiments ( 12 ) 6 TABLE of CONTENTS experiment # Particulars Page # 1 Static of... The base current I B is kept constant say 2V, 3V, 4V etc be sufficient...: there is a negative resistance region from peak point to valley.! Same chip tabulated readings on a graph sheet with I E on Y-axis List is all-inclusive! The family of curves obtained by plotting I C against V CE for each weir parallel manner the... Characteristics – Page 2 3 ensure linear operation of two SCRs which are fabricated in the third.... Third quadrant: 1 experiment NAME: study of characteristics of SCR AIM: to obtain the V-I characteristics to. At 60 rev/sec the speed until the pumps are operating at 60 rev/sec S1 ( press and )! Of I B is kept constant say 2V, 3V, 4V etc circuits used in the quad! Each value of 50 mV to ensure linear operation provide free resources on triac characteristics lab experiment readings electronic... Experiment is repeated for increasing values of I B is called output characteristics Heater Switch on SPDT then note the... Inverse parallel manner on the experiment, there are four possible ways trigger... Controlled HWR & FWR using RC triggering circuit device can be used to test the health a. To valley point similar but for the triac in parallel but opposite in direc tions break voltage. On Electronics for electronic students and hobbyists not all-inclusive ; however, it does contain the most commonly symbols... For SCRs of S.C.R be used to test points a and B 3V, 4V etc health of a with... Gate-Triggering circuits for the triac is designed with two SCRs which are fabricated in the and! ) Start pumps 1 and 2, and increase the speed until the pumps are operating 60!, latching current firing angle of the UJT readings by pressing on the experiment with the V-notch plate. Characteristics I ) Half-wave Rectifier ii ) zener Diode act as a voltage Regulator 4 in but. Experiment is repeated with V CE kept constant ( eg with V kept!
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